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Schottky diodes

Schottky diodes

Product description brief introduction: Schottky bai-based diode, also known as Schottky barrier diode (du SBD), is a low-power, ultra-high-speed semiconductor device. The most notable feature is the extremely short reverse recovery time (can be as small as a few nanoseconds), and the forward voltage drop is only about 0.4V. It is mostly used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes, protection diodes, and also useful as rectifier diodes and small signal detector diodes in circuits such as microwave communications. It is more common in communication power supplies, inverters, etc.

Product Details

product description:

Schottky baiji diode, also known as Schottky barrier diode (du SBD for short), is a kind of low-power, ultra-high-speed semiconductor device.

The most notable feature is the extremely short reverse recovery time (can be as small as a few nanoseconds), and the forward voltage drop is only about 0.4V. It is mostly used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes, protection diodes, and also useful as rectifier diodes and small signal detector diodes in circuits such as microwave communications. It is more common in communication power supplies, inverters, etc.

A typical application is in the switching circuit of a bipolar transistor BJT. By connecting a Shockley diode to the BJT to clamp, the transistor is actually close to the off state when it is on, thereby increasing the switching speed of the transistor. This method is the technology used in the TTL internal circuits of typical digital ICs such as 74LS, 74ALS, 74AS.

The biggest feature of Schottky diodes is that the forward voltage drop VF is relatively small. At the same current, its forward voltage drop is much smaller. In addition, its recovery time is short. It also has some disadvantages: the withstand voltage is relatively low, and the leakage current is slightly larger. It must be fully considered when selecting.

Features:

1) Since the height of the Schottky barrier is lower than the PN junction, the forward conduction threshold voltage and forward voltage of the Schottky diode are lower than that of the PN junction diode (about 0.2V lower).

2) Since SBD is a conductive device with the most carriers, there is no minority carrier lifetime and reverse recovery issues. The reverse recovery time of the SBD is only the charge and discharge time of the Schottky barrier capacitor, which is completely different from the PN junction diode. Because the reverse recovery charge of SBD is very small, the switching speed is very fast, and the switching loss is small, so it is especially suitable for high frequency applications.

However, the reverse barrier of SBD is thin, the surface is easy to break down, and the reverse breakdown voltage is relatively low. Since SBD is more prone to thermal breakdown than PN junction diode, the reverse leakage current is larger than that of PN junction diode.

Product function:

The structure and characteristics of SBD make it suitable for high-frequency rectification of low-voltage and high-current output fields, detection and mixing of high frequency bands (such as X-band, C-band, S-band and Ku-band), and clamping in high-speed logic circuits. SBD is a commonly used device in integrated circuits. For example, SBDTTL integrated circuits have become the mainstream of TTL circuits and have been widely used in high-speed computers.

In addition to the characteristic parameters of ordinary PN junction diodes, the electrical parameters of SBD used for detection and mixing also include intermediate frequency impedance (SBD applies a specified intermediate frequency impedance under the rated power of the local oscillator, generally between 200Ω and 600Ω), standing wave Ratio (generally ≤2) and noise figure.

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