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MOF oxide film resistance

MOF oxide film resistance

Product description brief introduction: The resistance range of metal oxide film resistors is 1Ω~200kΩ. The resistance is formed by the decomposition and deposition of hydrolyzable metal salt solutions (such as tin chloride and antimony trichloride) on the surface of hot glass or ceramics. With the different manufacturing conditions, the performance of the resistor is also very different. The main feature of this resistor is high temperature resistance, the working temperature range is +140~235℃, short-time overload use, the resistance temperature coefficient is ±3×10-4/℃, and the chemical stability is good. This kind of resistance has low resistivity, and the resistance value of low-power resistance does not exceed 100 kilohms, and its application range is limited, but it can be used as the low resistance part of metal film resistors.

Product Details

product description:

The resistance range of metal oxide film resistors is 1Ω~200kΩ. The resistance is formed by the decomposition and deposition of hydrolyzable metal salt solutions (such as tin chloride and antimony trichloride) on the surface of hot glass or ceramics. With the different manufacturing conditions, the performance of the resistor is also very different. The main feature of this resistor is high temperature resistance, the working temperature range is +140~235℃, short-time overload use, the resistance temperature coefficient is ±3×10-4/℃, and the chemical stability is good. This kind of resistance has low resistivity, and the resistance value of low-power resistance does not exceed 100 kilohms, and its application range is limited, but it can be used as the low resistance part of metal film resistors.


Features:

1. Good heat resistance, moisture resistance and overload stability

2. Hard film, not easy to damage, non-combustible structural coating

3. Use high-quality porcelain rods to make small products to replace large-size, high-power general resistors


Product disadvantages:

Under the action of direct current, the resistance of the oxide film is easily electrolyzed, resulting in reduction of the oxide film, unstable performance and low voltage resistance.



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